Datasheet STGY50NC60WD - STMicroelectronics IGBT, N 600 V 19 A MAX247 — Datenblatt

STMicroelectronics STGY50NC60WD

Part Number: STGY50NC60WD

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Manufacturer: STMicroelectronics

Description: IGBT, N 600 V 19 A MAX247

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Docket:
STGY50NC60WD
50 A, 600 V, ultra fast IGBT
Features
Very high frequency operation Low CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode
2 3

Specifications:

  • Transistor Type: IGBT
  • DC Collector Current: 110 A
  • Collector Emitter Voltage Vces: 2.5 V
  • Power Dissipation Max: 278 W
  • Collector Emitter Voltage V(br)ceo: 600 V
  • Operating Temperature Range: -55°C to +150°C
  • Transistor Case Style: Max-247
  • Current Ic Continuous a Max: 65 A
  • Package / Case: Max-247
  • Power Dissipation: 260 W
  • Power Dissipation Pd: 260 W
  • Pulsed Current Icm: 250 A
  • Rise Time: 17 ns
  • Termination Type: Through Hole
  • Transistor Polarity: N Channel
  • Voltage Vces: 600 V

RoHS: Yes