Datasheet BUP313D - Infineon IGBT, TO-218 — Datenblatt

Infineon BUP313D

Part Number: BUP313D

Detaillierte Beschreibung

Manufacturer: Infineon

Description: IGBT, TO-218

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Docket:
Infineon
IGBT With Antiparallel Diode
BUP 313D
Preliminary data
· Low forward voltage drop · High switching speed · Low tail current · Latch-up free · Including fast free-wheel diode Pin 1 G Type BUP 313D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code Q67040-A4228 Pin 3 E

Specifications:

  • Transistor Type: IGBT
  • Max Voltage Vce Sat: 3.2 V
  • Max Power Dissipation: 200 W
  • Collector-to-Emitter Breakdown Voltage: 1200 V
  • Transistor Case Style: TO-218AB
  • Number of Pins: 3
  • SVHC: Cobalt dichloride (18-Jun-2010)
  • Av Current If: 18 A
  • Case Style: TO-218AB
  • Current Ic @ Vce Sat: 15 A
  • Current Temperature: 25°C
  • Lead Spacing: 2.54mm
  • Max Current Ic Continuous a: 32 A
  • Max Junction Temperature Tj: 150°C
  • Max Power Dissipation Ptot: 200 W
  • Min Junction Temperature, Tj: -55°C
  • Number of Transistors: 1
  • Pin Format: 1G, 2C, 3E
  • Power Dissipation: 200 W
  • Power Dissipation Pd: 200 W
  • Pulsed Current Icm: 64 A
  • Rise Time: 45 ns
  • Termination Type: Through Hole
  • Transistor Polarity: N
  • Voltage Vces: 1200 V

RoHS: Yes

Accessories:

  • Dow Corning - 2265931
  • Fischer Elektronik - FK 243 MI 247 H
  • Fischer Elektronik - FK 243 MI 247 O
  • Fischer Elektronik - SK 145/25 STS-220
  • Fischer Elektronik - WLK 5