Datasheet GT15Q301 - Toshiba IGBT, 1200 V, TO-3P(N) — Datenblatt

Toshiba GT15Q301

Part Number: GT15Q301

Detaillierte Beschreibung

Manufacturer: Toshiba

Description: IGBT, 1200 V, TO-3P(N)

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Specifications:

  • Transistor Type: HP SW IGBT
  • Max Voltage Vce Sat: 2.7 V
  • Collector-to-Emitter Breakdown Voltage: 1200 V
  • Transistor Case Style: TO-3P (N)
  • Number of Pins: 3
  • Case Style: TO-3P (N)
  • Max Current Ic Continuous a: 15 A
  • Pin Format: GCE
  • Power Dissipation: 170 W
  • Power Dissipation Pd: 170 W
  • Pulsed Current Icm: 30 A
  • Rise Time: 50 ns
  • Termination Type: Through Hole
  • Transistor Polarity: N
  • Voltage Vces: 1200 V

RoHS: Yes

Accessories:

  • Fischer Elektronik - AKK 191
  • Fischer Elektronik - FK 201SA-3
  • Fischer Elektronik - TF 3 2
  • Fischer Elektronik - WLK 5