Datasheet STGD3NB60SD-1 - STMicroelectronics IGBT, I-PAK — Datenblatt

Detaillierte Beschreibung

Manufacturer: STMicroelectronics

Description: IGBT, I-PAK

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Specifications:

• Transistor Type: IGBT - PowerMESH - Low Drop
• Max Voltage Vce Sat: 1.5 V
• Transistor Case Style: I-PAK
• Case Style: I-PAK
• Current Temperature: 25°C
• Fall Time Tf: 720 ns
• Full Power Rating Temperature: 25°C
• Max Current Ic Continuous a: 3 A
• Power Dissipation: 48 W
• Power Dissipation Pd: 48 W
• Pulsed Current Icm: 25 A
• Rise Time: 150000 ns
• Termination Type: Through Hole
• Transistor Polarity: N
• Voltage Vces: 600 V

RoHS: Yes

Accessories:

• Fischer Elektronik - FK 244 13 D PAK
• Fischer Elektronik - WLK 5
• Roth Elektronik - RE901

Andere Namen:

STGD3NB60SD1, STGD3NB60SD 1