Datasheet Eudyna Devices FHX35LG — Datenblatt

FHX35LG
Super Low Noise HEMT
FEATURES
• Low Noise Figure: 1.2B (Typ.)@f=12GHz
• High Associated Gain: 10.0dB (Typ.)@f=12GHz
• Lg ≤ 0.25µm, Wg = 280µm
• Gold Gate Metallization for High Reliability
• Cost Effective Ceramic Microstrip (SMT) Package
• Tape and Reel Packaging Available DESCRIPTION
The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for
general purpose, low noise and high gain amplifiers in the 2-18GHz
frequency range. This device is packaged in cost effective, low parasitic,
hermetically sealed(LG) or epoxy-sealed(LP) metal-ceramic packages for
high volume telecommunication, DBS, TVRO, VSAT or other low noise
applications.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item Symbol Rating Unit Drain-Source Voltage VDS 4.0 V Gate-Source Voltage VGS -3.0 V Pt* 290 mW Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C Total Power Dissipation *Note: Mounted on Al2O3 board (30 x 30 x 0.65mm)
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 3 volts.
2. The forward and reverse gate currents should not exceed 0.2 and -0.075 mA respectively with
gate resistance of 4000Ω. …