Datasheet Vishay IRFD110 — Datenblatt

IRFD110
www.vishay.com Vishay Siliconix Power MOSFET
FEATURES D • Dynamic dV/dt rating HVMDIP • Repetitive avalanche rated
• For automatic insertion
G • End stackable
• 175 °C Operating Temperature S G • Fast switching and ease of paralleling
S D • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912 N-Channel MOSFET DESCRIPTION PRODUCT SUMMARY
VDS (V) Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness. 100 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.54
8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up
to 1 W. Single ORDERING INFORMATION
Package HVMDIP Lead (Pb)-free IRFD110PbF ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT Drain-source voltage VDS 100 Gate-source voltage VGS ± 20 VGS at 10 V Continuous drain current TA = 25 °C
TA = 100 °C Pulsed drain current a ID
IDM Linear derating factor
Single pulse avalanche energy b Repetitive avalanche current a
Repetitive avalanche energy a Maximum power dissipation …