Datasheet Texas Instruments CSD17303Q5 — Datenblatt
| Hersteller | Texas Instruments |
| Serie | CSD17303Q5 |

30-V-N-Kanal-NexFET™-Leistungs-MOSFET 8-VSON-CLIP -55 bis 150
Datenblätter
30V N-Channel NexFET Power MOSFET datasheet
PDF, 366 Kb, Revision: B, Datei veröffentlicht: Sep 29, 2010
Auszug aus dem Dokument
Status
| CSD17303Q5 | |
|---|---|
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
Verpackung
| CSD17303Q5 | |
|---|---|
| N | 1 |
| Pin | 8 |
| Package Type | DQH |
| Industry STD Term | VSON-CLIP |
| JEDEC Code | R-PSSO-N |
| Package QTY | 2500 |
| Carrier | LARGE T&R |
| Device Marking | CSD17303 |
| Width (mm) | 6 |
| Length (mm) | 5 |
| Thickness (mm) | 1 |
| Pitch (mm) | 1.27 |
| Max Height (mm) | 1.05 |
| Mechanical Data | Herunterladen |
Parameter
| Parameters / Models | CSD17303Q5![]() |
|---|---|
| Configuration | Single |
| IDM, Max Pulsed Drain Current(Max), A | 200 |
| Package, mm | SON5x6 |
| QG Typ, nC | 18 |
| QGD Typ, nC | 4 |
| RDS(on) Typ at VGS=4.5V, mOhm | 2 |
| Rds(on) Max at VGS=4.5V, mOhms | 2.6 |
| VDS, V | 30 |
| VGS, V | 10 |
| VGSTH Typ, V | 1.1 |
Öko-Plan
| CSD17303Q5 | |
|---|---|
| RoHS | Compliant |
| Pb Free | Yes |
Anwendungshinweise
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, Datei veröffentlicht: Nov 16, 2011
Modellreihe
Serie: CSD17303Q5 (1)
Herstellerklassifikation
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor
