Datasheet Nexperia BAS116 — Datenblatt

BAS116 Low-leakage diode
5 August 2020 Product data sheet 1. General description
Epitaxial medium-speed switching diode with a low leakage current in a small SOT23 plastic SMD
package. 2. Features and benefits
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• Plastic SMD package
Low leakage current: typ. 3 pA
Switching time: typ. 0.8 us
Continuous reverse voltage: max. 75 V
Repetitive peak reverse voltage: max. 85 V
Repetitive peak forward current: max. 500 mA.
AEC-Q101 qualified 3. Applications
• Low leakage current applications in surface mounted circuits. 4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter Conditions Min Typ Max Unit IF forward current tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C -215 mA VRRM repetitive peak reverse Tj = 25 °C
voltage -85 V VF forward voltage IF = 50 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C -1.1 V IR reverse current VR = 75 V; pulsed; Tj = 25 °C -0.003 5 nA trr reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 Ω; …