Datasheet BAS116,215 - NXP — Datenblatt

NXP BAS116,215

Part Number: BAS116,215

Detaillierte Beschreibung

Manufacturer: NXP

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Docket:
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
BAS116 Low-leakage diode

Specifications:

  • Diode Type: Switching
  • Forward Current If(AV): 150 mA
  • Forward Surge Current Ifsm Max: 4 A
  • Forward Voltage VF Max: 1.25 V
  • Number of Pins: 3
  • Package / Case: SOT-23
  • Repetitive Reverse Voltage Vrrm Max: 85 V
  • Reverse Recovery Time trr Max: 3 µs

RoHS: Yes

Andere Namen:

BAS116215, BAS116 215