Datasheet ON Semiconductor 2N6052 — Datenblatt

2N6052
Preferred Device Darlington Complementary
Silicon Power Transistors
This package is designed for general−purpose amplifier and low
frequency switching applications.
Features http://onsemi.com • High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc
• Collector−Emitter Sustaining Voltage — @ 100 mA
VCEO(sus) = 100 Vdc (Min) • Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• This is a Pb−Free Device* 12 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTOR
100 VOLTS, 150 WATTS MAXIMUM RATINGS (Note 1)
Rating Symbol Value Unit VCEO 100 Vdc Collector−Base Voltage VCB 100 Vdc Emitter−Base Voltage VEB 5.0 Vdc Collector Current − Continuous
Peak IC 12
20 Adc Base Current IB 0.2 Adc Total Power Dissipation @ TC = 25°C
Derate above 25°C PD 150
0.857 W
W/°C Operating and Storage Temperature
Range TJ, Tstg −65 to + 200 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.17 °C/W Collector−Emitter Voltage COLLECTOR
CASE
BASE
1 EMITTER 2 MARKING
DIAGRAM THERMAL CHARACTERISTICS …