Datasheet Analog Devices HMC717ALP3ETR — Datenblatt

HMC717ALP3E
v09.0816 AMPLIFIER -LOW NOISE -SMT GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 -6.0 GHz
Typical Applications Features The HMC717ALP3E is ideal for: Noise Figure: 1.1 dB • Fixed Wireless and LTE/WiMAX/4G Gain: 14.5 dB • BTS & Infrastructure Output IP3: +29.5 dBm • Repeaters and Femtocells Single Supply: +3V to +5V • Public Safety Radio 16 Lead 3x3mm QFN Package: 9 mm2 • Access Points Functional Diagram General Description
The HMC717ALP3E is a GaAs PHEMT MMIC
Low Noise Amplifier that is ideal for fixed wireless
and LTE/WiMAX/4G basestation front-end receivers
operating between 4.8 and 6.0 GHz. The amplifier
has been optimized to provide 1.1 dB noise figure,
14.5 dB gain and +29.5 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC717ALP3E can be biased with +3V to +5V and
features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the LNA for each application. Electrical Specifications TA = +25° C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V [1] [2]
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure Vdd = +3V
Min. Typ. Vdd = +5V …