Datasheet HMC717ALP3E (Analog Devices)

HerstellerAnalog Devices
BeschreibungGaAs pHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz
Seiten / Seite11 / 1 — HMC717ALP3E. Gaas pHEMT MMIC LOW NOIsE. aMpLIFIER, 4.8 - 6.0 GHz. Typical …
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HMC717ALP3E. Gaas pHEMT MMIC LOW NOIsE. aMpLIFIER, 4.8 - 6.0 GHz. Typical applications. Features. Functional Diagram

Datasheet HMC717ALP3E Analog Devices

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HMC717ALP3E
v09.0816
Gaas pHEMT MMIC LOW NOIsE aMpLIFIER, 4.8 - 6.0 GHz Typical applications Features
The HMC717ALP3E is ideal for: Noise Figure: 1.1 dB T • Fixed Wireless and LTE/WiMAX/4G Gain: 14.5 dB M • BTS & Infrastructure Output IP3: +29.5 dBm • Repeaters and Femtocel s Single Supply: +3V to +5V • Public Safety Radio 16 Lead 3x3mm QFN Package: 9 mm2 E - S • Access Points IS O
Functional Diagram General Description
The HMC717ALP3E is a GaAs PHEMT MMIC W N Low Noise Amplifier that is ideal for fixed wireless O and LTE/WiMAX/4G basestation front-end receivers operating between 4.8 and 6.0 GHz. The amplifier has been optimized to provide 1.1 dB noise figure, R - L 14.5 dB gain and +29.5 dBm output IP3 from a single supply of +5V. Input and output return losses are IE excel ent and the LNA requires minimal external matching and bias decoupling components. The LIF HMC717ALP3E can be biased with +3V to +5V and P features an external y adjustable supply current M which al ows the designer to tailor the linearity A performance of the LNA for each application.
Electrical specifications T = +25° C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V [1] [2] a
Vdd = +3V Vdd = +5V Parameter Units Min. Typ. Max. Min. Typ. Max. Frequency Range 4.8 - 6.0 4.8 - 6.0 GHz Gain 12.5 11.0 14.5 dB Gain Variation Over Temperature 0.005 0.01 dB/ °C Noise Figure 1.3 1.3 1.8 dB Input Return Loss 8 9 dB Output Return Loss 13 15 dB Output Power for 1 dB Compression (P1dB) 12 18 dBm Saturated Output Power (Psat) 14.5 19 dBm Output Third Order Intercept (IP3) 23.5 29.5 dBm Total Supply Current (Idd) 31 68 100 mA [1] Rbias resistor sets current, see application circuit herein [2] Vdd = Vdd1 = Vdd2 . Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
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rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Gain, Noise Figure & Rbias @ 5900 MHz Output IP3 vs. Rbias @ 5900 MHz Gain, Noise Figure & Rbias @ 4800 MHz Output IP3 vs. Rbias @ 4800 MHz Gain, Power & Noise Figure vs. Supply Voltage @ 5900 MHz Gain, Power & Noise Figure vs. Supply Voltage @ 4800 MHz Power Compression @ 5900 MHz Power Compression @ 5900 MHz Power Compression @ 4800 MHz Output IP3 and Total Supply Current vs. Supply Voltage @ 5900 MHz Output IP3 and Total Supply Current vs. Supply Voltage @ 4800 MHz Output IP3 vs. Temperature Psat vs. Temperature P1dB vs. Temperature Noise Figure vs. Temperature Reverse Isolation vs. Temperature Output Return Loss vs. Temperature Input Return Loss vs. Temperature Gain vs. Temperature Gain vs. Temperature Broadband Gain & Return Loss Power Compression @ 4800 MHz Absolute Bias Resistor Range & Recommended Bias Resistor Values Absolute Maximum Ratings Typical Supply Current vs. Supply Voltage Outline Drawing Package Information Pin Descriptions Application Circuit Evaluation PCB List of Materials