Datasheet Toshiba 2SJ305 — Datenblatt

HerstellerToshiba
Serie2SJ305
Artikelnummer2SJ305
Datasheet Toshiba 2SJ305

Kleinsignal-MOSFET

Datenblätter

Datasheet 2SJ305
PDF, 330 Kb, Sprache: en, Datei veröffentlicht: Mar, 2014, Seiten: 5
Field Effect Transistor Silicon P Channel MOS Type
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Preise

Verpackung

Pins3
Package CodeSOT-346
Manufacture Package CodeS-Mini
MountingSurface Mount
Width×Length×Height2.9×2.5×1.1 mm

Parameter

Application ScopeHigh-Speed Switching / Analog Switches
Assembly basesJapan
Drain current-200 mA
Drain-Source on-resistance (Max) [|VGS|=2.5V]4.0 Ω
Drain-Source voltage-30 V
Gate threshold voltage (Max)-1.5 V
Gate-Source voltage+/-20 V
Input capacitance (Typ.)92 pF
Internal ConnectionSingle
JEDECTO-236MOD
JEITASC-59
PolarityP-ch
Power Dissipation0.2 W

Öko-Plan

RoHSCompliant

Herstellerklassifikation