Datasheet Toshiba XPN12006NC — Datenblatt

HerstellerToshiba
SerieXPN12006NC
ArtikelnummerXPN12006NC
Datasheet Toshiba XPN12006NC

Leistungs-MOSFET (N-Kanal einfach 30 V <VDSS ≤ 60 V)

Datenblätter

Datasheet XPN12006NC
PDF, 574 Kb, Sprache: en, Datei veröffentlicht: Jun, 2020, Seiten: 10
MOSFETs Silicon N-channel MOS (U-MOSVIII-H)
Auszug aus dem Dokument

Preise

Status

Lifecycle StatusActive (Recommended for new designs)

Verpackung

Pins8
Manufacture Package CodeTSON Advance(WF)
MountingSurface Mount
Width×Length×Height3.3×3.6×0.85 mm

Parameter

AEC-Q101Qualified
Application ScopeDC-DC Converters / Automotive / Switching Voltage Regulators / Motor Drivers
Assembly basesJapan
Drain current20 A
Drain-Source on-resistance (Max) [|VGS|=10V]12 mΩ
Drain-Source on-resistance (Max) [|VGS|=4.5V]23.7 mΩ
Drain-Source voltage60 V
Gate threshold voltage (Max)2.5 V
Gate-Source voltage+/-20 V
GenerationU-MOSⅧ-H
Input capacitance (Typ.)1100 pF
Internal ConnectionSingle
PolarityN-ch
Power Dissipation65 W
Total gate charge (Typ.) [VGS=10V]23 nC

Öko-Plan

RoHSCompliant