Silicon Epitaxial Planar Transistor: BCX70
Features:
tFor AF input stages and driver applications
tHigh current gain
tLow collector-emitter saturation voltage
tLow noise between 30Hz and 15kHz
tComplementary types: BCX71
Applications:
tGeneral purpose transistor SOT-23 Ordering Information
Type No. Marking: Package Code: BCX70G AG SOT-23 BCX70H AH SOT-23 BCX70J AJ SOT-23 BCX70K AK SOT-23 Maximum Ratings & Characteristics: Tamb=25o
Parameter: Symbol: Value: Unit: Collector -Base Voltage VCBO 45 V Collector -Emitter Voltage VCEO 45 V Emitter -Base Voltage Vebo 5 V DC Collector Current IC 100 A Peak Collector Current ICM 200 mA Peak Base Current IBM 200 mA Collector Dissipation PTOT 350 W Junction and Storage Temperature Tj, Tstg -65 to +150 o O[[W!^^^MHYULSSJVT
O[[W!^^^UL^HYRJVT
O[[W!^^^JWJJV\R C Maximum Ratings & Characteristics: Tamb=25o
Parameter: Symbol: Test Conditions: Min: Collector -Base Breakdown Voltage V(BR)CBO IC=-10μA IE=0 45 V Collector -Emitter Breakdown Voltage V(BR)CEO IC=-10mA IB=0 45 V 5 Emmiter -Base Breakdown Voltage DC Current Gain Typ: Max: Unit: V(BR)EBO IE=-1.0μA IC=0 ICBO VCE=-45V,VBE=0 20 nA IEBO VEB=4V,IC=0 20 nA hFE VCE=5V,IC=10μA VCE=5V,IC=2mA VCE=5V,IC=50mA G
H
J
K
G
H
J
K
G
H …