Datasheet Toshiba TLP521-4 — Datenblatt
| Hersteller | Toshiba |
| Serie | TLP521-4 |
L-MOS LVP-Serie
Datenblätter
Toshiba Photocoupler
Single Exclusive-OR Gate. L-MOS LVP series
7UL1G86FU
CMOS Digital Integrated Circuits Silicon Monolithic 7UL1G86FU
1. Functional Description
• 2-Input Exclusive-OR Gate 2. Features
(1) High output current: ±8.0 mA (min) at VCC = 3.0 V (2) Super high speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V, CL = 15 pF (3) Operation voltage range: VCC = 0.9 to 3.6 V (4) 3.6 V tolerant inputs (5) 3.6 V power down protection output 3. Packaging USV 4. Marking and Pin Assignment Marking Pin Assignment (Top view) Start of commercial production
©2018
Toshiba Electronic Devices & Storage Corporation 1 2018-10
2018-05-22
Rev.1.0 7UL1G86FU
5. IEC Logic Symbol 6. Truth Table
A B Y L L L L H H H L H H H L 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Supply voltage
Input voltage Symbol Note VCC
VIN DC output voltage VOUT Input diode current IIK Rating Unit -0.5 to 4.6 V -0.5 to 4.6 V (Note 1) -0.5 to 4.6 V (Note 2) -0.5 to VCC + 0.5 (Note 3) -20 mA -20 mA ±25 mA Output diode current IOK DC output current IOUT VCC/ground current ICC ±50 mA Power dissipation PD 200 mW Storage temperature Tstg -65 to 150 Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc). …
Non-Inverter. L-MOS LVP series
7UL1G34FU
CMOS Digital Integrated Circuits Silicon Monolithic 7UL1G34FU
1. Functional Description
• Non-Inverter 2. Features
(1) High output current: ±8.0 mA (min) at VCC = 3.0 V (2) Super high speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V, CL = 15 pF (3) Operation voltage range: VCC = 0.9 to 3.6 V (4) 3.6 V tolerant inputs (5) 3.6 V power down protection output 3. Packaging USV 4. Marking and Pin Assignment Marking Pin Assignment (Top view) Start of commercial production
©2018
Toshiba Electronic Devices & Storage Corporation 1 2018-10
2018-05-09
Rev.1.0 7UL1G34FU
5. IEC Logic Symbol 6. Truth Table
A Y L L H H 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Supply voltage
Input voltage Symbol Note VCC
VIN DC output voltage VOUT Input diode current IIK Rating Unit -0.5 to 4.6 V -0.5 to 4.6 V (Note 1) -0.5 to 4.6 V (Note 2) -0.5 to VCC + 0.5 (Note 3) -20 mA -20 mA ±25 mA Output diode current IOK DC output current IOUT VCC/ground current ICC ±50 mA Power dissipation PD 200 mW Storage temperature Tstg -65 to 150 Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc). …
Non-Inverter. L-MOS LVP series
7UL1G34FS
CMOS Digital Integrated Circuits Silicon Monolithic 7UL1G34FS
1. Functional Description
• Non-Inverter 2. Features
(1) High output current: ±8.0 mA (min) at VCC = 3.0 V (2) Super high speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V, CL = 15 pF (3) Operation voltage range: VCC = 0.9 to 3.6 V (4) 3.6 V tolerant inputs (5) 3.6 V power down protection output 3. Packaging fSV 4. Marking and Pin Assignment Marking Pin Assignment (Top view) Start of commercial production
©2018
Toshiba Electronic Devices & Storage Corporation 1 2018-10
2018-06-07
Rev.2.0 7UL1G34FS
5. IEC Logic Symbol 6. Truth Table
A Y L L H H 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Supply voltage
Input voltage Symbol Note VCC
VIN DC output voltage VOUT Input diode current IIK Rating Unit -0.5 to 4.6 V -0.5 to 4.6 V (Note 1) -0.5 to 4.6 V (Note 2) -0.5 to VCC + 0.5 (Note 3) -20 mA Output diode current IOK -20 mA DC output current IOUT ±25 mA VCC/ground current ICC ±50 mA Power dissipation PD 50 mW Storage temperature Tstg -65 to 150 Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc). …
Single 2-Input OR Gate. L-MOS LVP series
7UL1G32FU
CMOS Digital Integrated Circuits Silicon Monolithic 7UL1G32FU
1. Functional Description
• 2-Input OR Gate 2. Features
(1) High output current: ±8.0 mA (min) at VCC = 3.0 V (2) Super high speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V, CL = 15 pF (3) Operation voltage range: VCC = 0.9 to 3.6 V (4) 3.6 V tolerant inputs (5) 3.6 V power down protection output 3. Packaging USV 4. Marking and Pin Assignment Marking Pin Assignment (Top view) Start of commercial production
©2018
Toshiba Electronic Devices & Storage Corporation 1 2018-10
2018-05-09
Rev.1.0 7UL1G32FU
5. IEC Logic Symbol 6. Truth Table
A B Y L L L L H H H L H H H H 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Supply voltage
Input voltage Symbol Note VCC
VIN DC output voltage VOUT Input diode current IIK Rating Unit -0.5 to 4.6 V -0.5 to 4.6 V (Note 1) -0.5 to 4.6 V (Note 2) -0.5 to VCC + 0.5 (Note 3) -20 mA -20 mA ±25 mA Output diode current IOK DC output current IOUT VCC/ground current ICC ±50 mA Power dissipation PD 200 mW Storage temperature Tstg -65 to 150 Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc). …
Single 2-Input OR Gate. L-MOS LVP series
7UL1G32FS
CMOS Digital Integrated Circuits Silicon Monolithic 7UL1G32FS
1. Functional Description
• 2-Input OR Gate 2. Features
(1) High output current: ±8.0 mA (min) at VCC = 3.0 V (2) Super high speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V, CL = 15 pF (3) Operation voltage range: VCC = 0.9 to 3.6 V (4) 3.6 V tolerant inputs (5) 3.6 V power down protection output 3. Packaging fSV 4. Marking and Pin Assignment Marking Pin Assignment (Top view) Start of commercial production
©2017
Toshiba Electronic Devices & Storage Corporation 1 2018-02
2017-12-21
Rev.1.0 7UL1G32FS
5. IEC Logic Symbol 6. Truth Table
A B Y L L L L H H H L H H H H 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Supply voltage
Input voltage Symbol Note VCC
VIN DC output voltage VOUT Input diode current IIK Rating Unit -0.5 to 4.6 V -0.5 to 4.6 V (Note 1) -0.5 to 4.6 V (Note 2) -0.5 to VCC + 0.5 (Note 3) -20 mA Output diode current IOK -20 mA DC output current IOUT ±25 mA VCC/ground current ICC ±50 mA Power dissipation PD 50 mW Storage temperature Tstg -65 to 150 Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc). …
Single Schmitt Buffer. L-MOS LVP series
7UL1G17FS
CMOS Digital Integrated Circuits Silicon Monolithic 7UL1G17FS
1. Functional Description
• Schmitt Buffer 2. Features
(1) High output current: ±8.0 mA (min) at VCC = 3.0 V (2) Super high speed operation: tpd = 3.0 ns (typ.) at VCC = 3.3 V, CL = 15 pF (3) Operation voltage range: VCC = 0.9 to 3.6 V (4) 3.6 V tolerant inputs (5) 3.6 V power down protection output 3. Packaging fSV 4. Marking and Pin Assignment Marking Pin Assignment (Top view) Start of commercial production
©2018
Toshiba Electronic Devices & Storage Corporation 1 2018-10
2018-06-07
Rev.2.0 7UL1G17FS
5. IEC Logic Symbol 6. Truth Table
A Y L L H H 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Supply voltage
Input voltage Symbol Note VCC
VIN DC output voltage VOUT Input diode current IIK Rating Unit -0.5 to 4.6 V -0.5 to 4.6 V (Note 1) -0.5 to 4.6 V (Note 2) -0.5 to VCC + 0.5 (Note 3) -20 mA Output diode current IOK -20 mA DC output current IOUT ±25 mA VCC/ground current ICC ±50 mA Power dissipation PD 50 mW Storage temperature Tstg -65 to 150 Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc). …
Single Bus Buffer (3-State). L-MOS LVP series
7UL1G126FS
CMOS Digital Integrated Circuits Silicon Monolithic 7UL1G126FS
1. Functional Description
• Bus Buffer with 3-State Output 2. Features
(1) High output current: ±8.0 mA (min) at VCC = 3.0 V (2) Super high speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V, CL = 15 pF (3) Operation voltage range: VCC = 0.9 to 3.6 V (4) 3.6 V tolerant inputs (5) 3.6 V power down protection output 3. Packaging fSV 4. Marking and Pin Assignment Marking Pin Assignment (Top view) Start of commercial production
©2018
Toshiba Electronic Devices & Storage Corporation 1 2018-10
2018-06-07
Rev.2.0 7UL1G126FS
5. IEC Logic Symbol 6. Truth Table X:
Z: G A Y L X Z H L L H H H Don't care
High impedance 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Supply voltage
Input voltage Symbol Note VCC
VIN DC output voltage VOUT Input diode current IIK Rating Unit -0.5 to 4.6 V -0.5 to 4.6 V (Note 1) -0.5 to 4.6 V (Note 2) -0.5 to VCC + 0.5 (Note 3) -20 mA Output diode current IOK -20 mA DC output current IOUT ±25 mA VCC/ground current ICC ±50 mA Power dissipation PD 50 mW Storage temperature Tstg -65 to 150 Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report …
Single 2-Input AND Gate. L-MOS LVP series
7UL1G08FU
CMOS Digital Integrated Circuits Silicon Monolithic 7UL1G08FU
1. Functional Description
• 2-Input AND Gate 2. Features
(1) High output current: ±8.0 mA (min) at VCC = 3.0 V (2) Super high speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V, CL = 15 pF (3) Operation voltage range: VCC = 0.9 to 3.6 V (4) 3.6 V tolerant inputs (5) 3.6 V power down protection output 3. Packaging USV 4. Marking and Pin Assignment Marking Pin Assignment (Top view) Start of commercial production
©2018
Toshiba Electronic Devices & Storage Corporation 1 2018-08
2018-03-28
Rev.1.0 7UL1G08FU
5. IEC Logic Symbol 6. Truth Table
A B Y L L L L H L H L L H H H 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics Symbol Note Rating Unit Supply voltage VCC -0.5 to 4.6 V Input voltage VIN -0.5 to 4.6 V (Note 1) -0.5 to 4.6 V (Note 2) -0.5 to VCC + 0.5 DC output voltage VOUT Input diode current IIK Output diode current IOK -20 mA -20 mA DC output current
VCC/ground current IOUT ±25 mA ICC ±50 mA (Note 3) Power dissipation PD 200 mW Storage temperature Tstg -65 to 150 Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: VCC = 0 V
Note 2: High (H) or Low (L) state. IOUT absolute maximum rating must be observed. …
Single 2-Input AND Gate. L-MOS LVP series
7UL1G08FS
CMOS Digital Integrated Circuits Silicon Monolithic 7UL1G08FS
1. Functional Description
• 2-Input AND Gate 2. Features
(1) High output current: ±8.0 mA (min) at VCC = 3.0 V (2) Super high speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V, CL = 15 pF (3) Operation voltage range: VCC = 0.9 to 3.6 V (4) 3.6 V tolerant inputs (5) 3.6 V power down protection output 3. Packaging fSV 4. Marking and Pin Assignment Marking Pin Assignment (Top view) Start of commercial production
©2017
Toshiba Electronic Devices & Storage Corporation 1 2018-02
2017-12-21
Rev.1.0 7UL1G08FS
5. IEC Logic Symbol 6. Truth Table
A B Y L L L L H L H L L H H H 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics Symbol Note Rating Unit Supply voltage VCC -0.5 to 4.6 V Input voltage VIN -0.5 to 4.6 V (Note 1) -0.5 to 4.6 V (Note 2) -0.5 to VCC + 0.5 DC output voltage VOUT Input diode current IIK Output diode current IOK -20 mA -20 mA DC output current
VCC/ground current IOUT ±25 mA ICC ±50 mA (Note 3) Power dissipation PD 50 mW Storage temperature Tstg -65 to 150 Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: VCC = 0 V
Note 2: High (H) or Low (L) state. IOUT absolute maximum rating must be observed.
…
Single Inverter. L-MOS LVP series
7UL1G04FU
CMOS Digital Integrated Circuits Silicon Monolithic 7UL1G04FU
1. Functional Description
• Inverter 2. Features
(1) High output current: ±8.0 mA (min) at VCC = 3.0 V (2) Super high speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V, CL = 15 pF (3) Operation voltage range: VCC = 0.9 to 3.6 V (4) 3.6 V tolerant inputs (5) 3.6 V power down protection output 3. Packaging USV 4. Marking and Pin Assignment Marking Pin Assignment (Top view) Start of commercial production
©2018
Toshiba Electronic Devices & Storage Corporation 1 2018-08
2018-05-09
Rev.1.0 7UL1G04FU
5. IEC Logic Symbol 6. Truth Table
A Y L H H L 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Supply voltage
Input voltage Symbol Note VCC
VIN DC output voltage VOUT Input diode current IIK Rating Unit -0.5 to 4.6 V -0.5 to 4.6 V (Note 1) -0.5 to 4.6 V (Note 2) -0.5 to VCC + 0.5 (Note 3) -20 mA -20 mA ±25 mA Output diode current IOK DC output current IOUT VCC/ground current ICC ±50 mA Power dissipation PD 200 mW Storage temperature Tstg -65 to 150 Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
…
Single Inverter. L-MOS LVP series
7UL1G04FS
CMOS Digital Integrated Circuits Silicon Monolithic 7UL1G04FS
1. Functional Description
• Inverter 2. Features
(1) High output current: ±8.0 mA (min) at VCC = 3.0 V (2) Super high speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V, CL = 15 pF (3) Operation voltage range: VCC = 0.9 to 3.6 V (4) 3.6 V tolerant inputs (5) 3.6 V power down protection output 3. Packaging fSV 4. Marking and Pin Assignment Marking Pin Assignment (Top view) Start of commercial production
©2018
Toshiba Electronic Devices & Storage Corporation 1 2018-10
2018-06-07
Rev.2.0 7UL1G04FS
5. IEC Logic Symbol 6. Truth Table
A Y L H H L 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Supply voltage
Input voltage Symbol Note VCC
VIN DC output voltage VOUT Input diode current IIK Rating Unit -0.5 to 4.6 V -0.5 to 4.6 V (Note 1) -0.5 to 4.6 V (Note 2) -0.5 to VCC + 0.5 (Note 3) -20 mA Output diode current IOK -20 mA DC output current IOUT ±25 mA VCC/ground current ICC ±50 mA Power dissipation PD 50 mW Storage temperature Tstg -65 to 150 Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
…
Single 2-Input NOR Gate. L-MOS LVP series
7UL1G02FU
CMOS Digital Integrated Circuits Silicon Monolithic 7UL1G02FU
1. Functional Description
• 2-Input NOR Gate 2. Features
(1) High output current: ±8.0 mA (min) at VCC = 3.0 V (2) Super high speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V, CL = 15 pF (3) Operation voltage range: VCC = 0.9 to 3.6 V (4) 3.6 V tolerant inputs (5) 3.6 V power down protection output 3. Packaging USV 4. Marking and Pin Assignment Marking Pin Assignment (Top view) Start of commercial production
©2018
Toshiba Electronic Devices & Storage Corporation 1 2018-08
2018-03-28
Rev.1.0 7UL1G02FU
5. IEC Logic Symbol 6. Truth Table
A B Y L L H L H L H L L H H L 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics Symbol Note Rating Unit Supply voltage VCC -0.5 to 4.6 V Input voltage VIN -0.5 to 4.6 V (Note 1) -0.5 to 4.6 V (Note 2) -0.5 to VCC + 0.5 DC output voltage VOUT Input diode current IIK Output diode current IOK -20 mA -20 mA DC output current
VCC/ground current IOUT ±25 mA ICC ±50 mA (Note 3) Power dissipation PD 200 mW Storage temperature Tstg -65 to 150 Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: VCC = 0 V
Note 2: High (H) or Low (L) state. IOUT absolute maximum rating must be observed.
…
Single 2-Input NOR Gate. L-MOS LVP series
7UL1G02FS
CMOS Digital Integrated Circuits Silicon Monolithic 7UL1G02FS
1. Functional Description
• 2-Input NOR Gate 2. Features
(1) High output current: ±8.0 mA (min) at VCC = 3.0 V (2) Super high speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V, CL = 15 pF (3) Operation voltage range: VCC = 0.9 to 3.6 V (4) 3.6 V tolerant inputs (5) 3.6 V power down protection output 3. Packaging fSV 4. Marking and Pin Assignment Marking Pin Assignment (Top view) Start of commercial production
©2017
Toshiba Electronic Devices & Storage Corporation 1 2018-02
2017-12-21
Rev.1.0 7UL1G02FS
5. IEC Logic Symbol 6. Truth Table
A B Y L L H L H L H L L H H L 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics Symbol Note Rating Unit Supply voltage VCC -0.5 to 4.6 V Input voltage VIN -0.5 to 4.6 V (Note 1) -0.5 to 4.6 V (Note 2) -0.5 to VCC + 0.5 DC output voltage VOUT Input diode current IIK Output diode current IOK -20 mA -20 mA DC output current
VCC/ground current IOUT ±25 mA ICC ±50 mA (Note 3) Power dissipation PD 50 mW Storage temperature Tstg -65 to 150 Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: VCC = 0 V
Note 2: High (H) or Low (L) state. IOUT absolute maximum rating must be observed.
…