Datasheet Toshiba SSM6N813R — Datenblatt

HerstellerToshiba
SerieSSM6N813R

Kleinsignal-MOSFET 2 in 1

Datenblätter

SSM6N813R Data sheet/English
PDF, 440 Kb, Sprache: en, Datei veröffentlicht: Sep, 2018
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Preise

Status

SSM6N813RSSM6N813R,LFSSM6N813R,LXGF
Lifecycle StatusActive (Recommended for new designs)

Verpackung

SSM6N813RSSM6N813R,LFSSM6N813R,LXGF
N123
Manufacture Package CodeTSOP6F

Parameter

Parameters / ModelsSSM6N813RSSM6N813R,LFSSM6N813R,LXGF
Application ScopePower Management Switches
Assembly basesThailand
Component Product (Q1)SSM6N813R
Component Product (Q2)SSM6N813R
Drain-Source on-resistance (Q1/Q2) (Max) [|VGS|=10V], mΩ112
Drain-Source on-resistance (Q1/Q2) (Max) [|VGS|=4.5V], mΩ154
Gate threshold voltage (Q1/Q2) (Max), V2.5
GenerationU-MOSⅧ-H
Input capacitance (Q1/Q2) (Typ.), pF242
Internal ConnectionIndependent
PolarityN-ch×2
Total gate charge (Q1/Q2) (Typ.) [VGS=4.5V], nC3.6

Öko-Plan

SSM6N813RSSM6N813R,LFSSM6N813R,LXGF
RoHSCompliant

Modellreihe

Herstellerklassifikation

  • MOSFETs