Datasheet ON Semiconductor BC549C — Datenblatt

Low Noise Transistors BC549B,C
BC550B,C NPN Silicon
MAXIMUM RATINGS
Rating Symbol BC549 BC550 Unit Collector–Emitter Voltage VCEO 30 45 Vdc Collector–Base Voltage VCBO 30 50 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C
Derate above 25°C PD 625
5.0 mW
mW/°C Total Device Dissipation @ TC = 25°C
Derate above 25°C PD 1.5
12 Watt
mW/°C TJ, Tstg –55 to +150 °C Symbol Max Unit Operating and Storage Junction
Temperature Range 1
2 3 CASE 29–04, STYLE 17
TO–92 (TO–226AA) THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient RJA 200 °C/W Thermal Resistance, Junction to Case RJC 83.3 °C/W COLLECTOR
1
2
BASE
3
EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol Characteristic Min Typ Max Unit 30
45 —
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