Datasheet ON Semiconductor BC327BU — Datenblatt

BC327, BC327-16,
BC327-25, BC327-40
Amplifier Transistors
PNP Silicon
http://onsemi.com Features • These are Pb−Free Devices* COLLECTOR
1 MAXIMUM RATINGS
Rating Symbol Value Unit Collector −Emitter Voltage VCEO −45 Vdc Collector −Emitter Voltage VCES −50 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −800 mAdc Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C PD 625
5.0 mW
mW/°C Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C PD 1.5
12 W
mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction
Temperature Range 2
BASE
3
EMITTER TO−92
CASE 29
STYLE 17
1 12 THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the …