Datasheet Texas Instruments CSD87503Q3ET — Datenblatt
| Hersteller | Texas Instruments |
| Serie | CSD87503Q3E |
| Artikelnummer | CSD87503Q3ET |
30-V-Dual-N-Kanal-MOSFET, gemeinsame Quelle 8-VSON -55 bis 150
Datenblätter
CSD87503Q3E 30-V N-Channel NexFETв„ў Power MOSFETs datasheet
PDF, 480 Kb, Datei veröffentlicht: Sep 13, 2017
Auszug aus dem Dokument
Status
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No |
Verpackung
| Pin | 8 |
| Package Type | DTD |
| Package QTY | 250 |
| Carrier | SMALL T&R |
| Device Marking | 87503E |
| Width (mm) | 3.3 |
| Length (mm) | 3.3 |
| Thickness (mm) | 1 |
| Mechanical Data | Herunterladen |
Parameter
| Configuration | Dual Common Source |
| ID, package limited | 10 A |
| IDM, Max Pulsed Drain Current(Max) | 89 A |
| Package | SON3x3 mm |
| QG Typ | 13.4 nC |
| QGD Typ | 5.8 nC |
| RDS(on) Typ at VGS=4.5V | 17.3 mOhm |
| Rds(on) Max at VGS=10V | 16.9 mOhms |
| Rds(on) Max at VGS=4.5V | 21.9 mOhms |
| VDS | 30 V |
| VGS | 20 V |
| VGSTH Typ | 1.7 V |
Öko-Plan
| RoHS | Compliant |
Modellreihe
Serie: CSD87503Q3E (2)
- CSD87503Q3E CSD87503Q3ET
Herstellerklassifikation
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor