Datasheet BUL45D2G - ON Semiconductor BIPOLAR TRANSISTOR, NPN, 400 V, TO-220 — Datenblatt

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Manufacturer: ON Semiconductor

Description: BIPOLAR TRANSISTOR, NPN, 400 V, TO-220

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Docket:
BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor
with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
The BUL45D2G is state-of-art High Speed High gain BiPolar transistor (H2BIP).

High dynamic characteristics and lot-to-lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. It's characteristics make it also suitable for PFC application.
Features http://onsemi.com
POWER TRANSISTOR 5.0 AMPERES, 700 VOLTS, 75 WATTS

Specifications:

• Collector Emitter Voltage V(br)ceo: 400 V
• DC Collector Current: 5 A
• DC Current Gain Max (hfe): 32
• Power Dissipation Pd: 75 W
• Transistor Polarity: N Channel
• Transition Frequency Typ ft: 13 MHz

RoHS: Yes

Accessories:

• WAKEFIELD SOLUTIONS - 273-AB