Datasheet Microsemi 2N6304 — Datenblatt

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855 2N6304
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS Features Silicon RF NPN, TO-72, UHF general purpose Low Noise
Transistor
Noise Figure = 5.0 dB (typ) @ f = 450 MHz High FT -1.4 GHz (min) @ IC = 10 mAdc
Maximum Available Gain = 14 dB (min) @ f = 500 MHz 2
1 3
4 1. Emitter
2. Base
3. Collector
4. Case TO-72 DESCRIPTION:
The 2N6304 is a silicon NPN transistor designed primarily for use in high gain, low noise general-purpose UHF amplifiers. ABSOLUTE MAXIMUM RATINGS (Tcase = 25В°C)
Symbol
VCEO Parameter
Collector-Emitter Voltage Value
15 Unit
Vdc VCBO
VEBO Collector-Base Voltage 30 Vdc Emitter-Base Voltage 3.5 Vdc Collector Current 50 IC mA 200
1.14 mWatts …