Datasheet Microchip LND250K1-G — Datenblatt

LND150/LND250
N-Channel Depletion-Mode DMOS FETs
Features General Description •
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• The LND150 and LND250 are high-voltage N-channel
Depletion-mode (normally-on) transistors utilizing
lateral DMOS technology. The gate is ESD protected. Free from Secondary Breakdown
Low-Power Drive Requirement
Ease of Paralleling
Excellent Thermal Stability
Integral Source-Drain Diode
High Input Impedance and Low CISS
ESD Gate Protection The LND150/LND250 are ideal for high-voltage applications, such as normally-on switches, precision
constant-current sources, voltage-ramp generation
and amplification. Applications
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Supertex inc. LND250
N-Channel Depletion-Mode
DMOS FET
General Description Features
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► Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source-drain diode
High input impedance and low CISS
ESD gate protection The LND250 is a high voltage N-channel depletion mode
(normally-on) transistor utilizing Supertex’s lateral DMOS
technology. The gate is ESD protected.
The LND250 is ideal for high voltage applications in the
areas of normally-on switches, precision constant current
sources, voltage ramp generation and amplification. Applications
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