Datasheet Microchip LND01K1-G — Datenblatt

LND01
Lateral N-Channel Depletion-Mode MOSFET
Features General Description •
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• The LND01 is a low-threshold, Depletion-mode
(normally-on) transistor that uses an advanced lateral
DMOS structure and a well-proven silicon gate
manufacturing process. This combination produces a
device with the power handling capabilities of bipolar
transistors as well as the high input impedance and
positive
temperature
coefficient
inherent
in
MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally
induced secondary breakdown. Bi-directional
Low On-resistance …