Datasheet Microchip DN3525N8-G — Datenblatt

DN3525
N-Channel Depletion-Mode Vertical DMOS FET
Features General Description •
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• The DN3525 is a low-threshold Depletion-mode
(normally-on) transistor that uses an advanced vertical
DMOS structure and a well-proven silicon gate
manufacturing process. This combination produces a
device with the power handling capabilities of bipolar
transistors and the high input impedance and positive
temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally induced
secondary breakdown. High Input Impedance
Low Input Capacitance
Fast Switching Speeds
Low On-Resistance
Free from Secondary Breakdown
Low Input and Output Leakage Applications
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Supertex inc. DN3525
N-Channel Depletion-Mode
Vertical DMOS FETs Features
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►► General Description High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage The Supertex DN3525 is a low threshold depletion-mode
(normally-on) transistor utilizing an advanced vertical
DMOS structure and Supertex's well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown. Applications
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