Datasheet Microchip DN2530N3-G — Datenblatt

DN2530
N-Channel, Depletion-Mode, Vertical DMOS FET
Features Description •
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• The DN2530 is a low-threshold, depletion-mode, normally-on transistor that utilizes an advanced vertical
DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device
with the power-handling capabilities of bipolar transistors, plus the high-input impedance and positive-temperature
coefficient
inherent
in
Metal-Oxide
Semiconductor (MOS) devices. Characteristic of all
MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. High-input impedance
Low-input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage Applications
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