Datasheet IXDR35N60BD1 - IXYS IGBT, ISOPLUS247 — Datenblatt

IXYS IXDR35N60BD1

Part Number: IXDR35N60BD1

Detaillierte Beschreibung

Manufacturer: IXYS

Description: IGBT, ISOPLUS247

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Docket:
IGBT with optional Diode
High Speed, Low Saturation Voltage
IXDR 35N60 BD1 VCES = 600 V = 38 A IC25 VCE(sat) typ = 2.2 V
C G
ISOPLUS 247TM

Specifications:

  • Transistor Type: NPT
  • Max Voltage Vce Sat: 2.7 V
  • Transistor Case Style: ISOPLUS-247
  • Case Style: ISOPLUS-247
  • Fall Time Tf: 70 ns
  • Junction to Case Thermal Resistance A: 1°C/ W
  • Max Current Ic Continuous a: 38 A
  • Pin Configuration: Copack (FRD)
  • Power Dissipation: 125 W
  • Rise Time: 70 ns
  • Termination Type: Through Hole
  • Transistor Polarity: NPN
  • Voltage Vces: 600 V

RoHS: Yes