Datasheet Infineon SIGC03T60SEX1SA1 — Datenblatt

SIGC03T60SE
3 IGBT Chip
Features: 600V Trench & Field Stop technology low VCE(sat) low turn-off losses short tail current positive temperature coefficient easy paralleling This chip is used for: power module discrete components C Applications: drives white goods resonant applications G Chip Type VCE IC Die Size Package SIGC03T60SE 600V 4A 1.75 x 1.79 mm2 sawn on foil E Mechanical Parameters
Raster size 1.75 x 1.79 Emitter pad size 0.912 x 0.988 Gate pad size 0.361 x 0.513 mm2 Area total 3.13 Thickness 70 Вµm Wafer size 200 mm Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal 4989
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding Die bond Electrically conductive glue or solder Wire bond Al, <500Вµm Reject ink dot size
Recommended storage environment в€… 0.65mm ; max 1.2mm
Store in original container, in dry nitrogen, in dark
environment, < 6 month at an ambient temperature of 23В°C Edited by INFINEON Technologies, IMM PSD, L7481N, Edition 1.0, 12.07.2010 SIGC03T60SE
Maximum Ratings
Parameter Symbol Value Unit 600 V 1) A Collector-Emitter voltage, Tvj =25 °C VCE DC collector current, limited by Tvj max IC Pulsed collector current, tp limited by Tvj max Ic,puls 12 A Gate emitter voltage VGE ±20 V Junction temperature range Tvj -40 . +175 °C Operating junction temperature Tvj -40.+150 °C tSC 5 µs Short circuit data 2) VGE = 15V, VCC = 360V, Tvj = 150°C I C , m a x = 8A, V C E , m a x = 600V Reverse bias safe operating area 2 ) (RBSOA) Tvj ≤ 1 5 0 °C 1) depending on thermal properties of assembly 2) not subject to production test -verified by design/characterization Static Characteristics (tested on wafer), Tvj =25 °C
Parameter Symbol Value Conditions min. VGE=0V , IC= 2 mA typ. max. 1.5 2.05 4.9 5.7 Unit Collector-Emitter breakdown voltage V(BR)CES 600 Collector-Emitter saturation voltage VCEsat VGE=15V, IC=4A Gate-Emitter threshold voltage VGE(th) IC=60µA , VGE=VCE Zero gate voltage collector current ICES VCE=600V , VGE=0V 0.4 µA Gate-Emitter leakage current IGES VCE=0V , VGE=20V 800 nA Integrated gate resistor rG 4.1 V Ω -Dynamic Characteristics (not subject to production test -verified by design / characterization),
Tvj =25 В°C
Parameter Symbol Conditions Value
min. Typ. Input capacitance Cies V C E =25V, 252 Output capacitance Coes VGE=0V, 20 Reverse transfer capacitance Cres f=1MHz 7.5 Edited by INFINEON Technologies, IMM PSD, L7481N, Edition 1.0, 12.07.2010 max. Unit pF SIGC03T60SE
Further Electrical Characteristic
Switching characteristics and thermal properties are dependi …