Datasheet IRFZ34NPBF - International Rectifier MOSFET, N, 55 V, 26 A, TO-220 — Datenblatt

International Rectifier IRFZ34NPBF

Part Number: IRFZ34NPBF

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: MOSFET, N, 55 V, 26 A, TO-220

Docket:
PD - 94807
IRFZ34NPbF
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Lead-Free Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB

Simulation Model

Specifications:

Continuous Drain Current Id: 26 A
Current Id Max: 29 A
Current Temperature: 25°C
Device Marking: IRFZ34NPBF
Drain Source Voltage Vds: 55 V
Full Power Rating Temperature: 25°C
Junction to Case Thermal Resistance A: 2.7°C/W
Lead Spacing: 2.54 mm
Mounting Type: Through Hole
Number of Pins: 3
Number of Transistors: 1
On Resistance Rds(on): 40 MOhm
Package / Case: TO-220AB
Pin Format: 1 g
Power Dissipation Pd: 56 W
Pulse Current Idm: 100 A
Rds(on) Test Voltage Vgs: 10 V
SVHC: No SVHC (15-Dec-2010)
Threshold Voltage Vgs Typ: 4 V
Transistor Case Style: TO-220AB
Transistor Polarity: N Channel
Voltage Vds Typ: 55 V
Voltage Vgs Max: 4 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

Fischer Elektronik - SK 145/37,5 STS-220
Fischer Elektronik - SK 409/25,4 STS
Fischer Elektronik - SK 409/50,8 STS
Fischer Elektronik - WLK 5