Datasheet BSS138N - Infineon N CHANNEL MOSFET, 230 mA, 60 V, SOT23 — Datenblatt

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Manufacturer: Infineon

Description: N CHANNEL MOSFET, 230 mA, 60 V, SOT23

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Docket:
BSS138N
SIPMOS® Small-Signal-Transistor
Features · N-channel · Enhancement mode · Logic level · dv /dt rated · Pb-free lead-plating; RoHS compliant
Product Summary V DS R DS(on),max ID 60 3.5 0.23 V A
PG-SOT-23

Specifications:

• Continuous Drain Current Id: 230 mA
• Current Id Max: 230 mA
• Current Temperature: 25°C
• Drain Source Voltage Vds: 60 V
• External Depth: 2.5 mm
• External Length / Height: 1.12 mm
• External Width: 3.05 mm
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 3.5 Ohm
• Package / Case: SOT-23
• Power Dissipation Pd: 360 mW
• Power Dissipation Ptot Max: 360 mW
• Pulse Current Idm: 920 mA
• Rate of Voltage Change dv / dt: 6kV/µs
• Rds(on) Test Voltage Vgs: 10 V
• SMD Marking: SKs
• Tape Width: 8 mm
• Threshold Voltage Vgs Typ: 1 V
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Voltage Vds Typ: 60 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 1.4 V
• Voltage Vgs th Min: 0.6 V

RoHS: Yes