Datasheet Texas Instruments LM5109B-Q1 — Datenblatt

HerstellerTexas Instruments
SerieLM5109B-Q1
Datasheet Texas Instruments LM5109B-Q1

Hochspannungs-1A-Peak-Halbbrückentor-Treiber

Datenblätter

LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver datasheet
PDF, 799 Kb, Revision: A, Datei veröffentlicht: Dec 8, 2015
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Preise

Status

LM5109BQNGTRQ1LM5109BQNGTTQ1
Lifecycle StatusActive (Recommended for new designs)Active (Recommended for new designs)
Manufacture's Sample AvailabilityYesNo

Verpackung

LM5109BQNGTRQ1LM5109BQNGTTQ1
N12
Pin88
Package TypeNGTNGT
Industry STD TermWSONWSON
JEDEC CodeS-PDSO-NS-PDSO-N
Package QTY45001000
CarrierLARGE T&RSMALL T&R
Device MarkingL5109QL5109Q
Width (mm)44
Length (mm)44
Thickness (mm).8.8
Pitch (mm).8.8
Max Height (mm).8.8
Mechanical DataHerunterladenHerunterladen

Parameter

Parameters / ModelsLM5109BQNGTRQ1
LM5109BQNGTRQ1
LM5109BQNGTTQ1
LM5109BQNGTTQ1
Bus Voltage, V9090
Channel Input LogicTTLTTL
Fall Time, ns1515
Input ThresholdTTLTTL
Input VCC(Max), V1414
Input VCC(Min), V88
Iq, uA1010
Negative Voltage Handling at HS Pin, V-1-1
Number of Channels22
Operating Temperature Range, C-40 to 125-40 to 125
Package GroupWSONWSON
Peak Output Current, A11
Power SwitchMOSFETMOSFET
Prop Delay, ns3030
RatingAutomotiveAutomotive
Rise Time, ns1515
Special FeaturesN/AN/A

Öko-Plan

LM5109BQNGTRQ1LM5109BQNGTTQ1
RoHSCompliantCompliant

Modellreihe

Serie: LM5109B-Q1 (2)

Herstellerklassifikation

  • Semiconductors> Power Management> MOSFET and IGBT Gate Drivers> Half-bridge Driver