Datasheet Texas Instruments CSD16570Q5B — Datenblatt
| Hersteller | Texas Instruments |
| Serie | CSD16570Q5B |
CSD16570Q5B, 25-V-N-Kanal-NexFET - Leistungs-MOSFET
Datenblätter
CSD16570Q5B 25-V N-Channel NexFET Power MOSFET datasheet
PDF, 438 Kb, Revision: A, Datei veröffentlicht: May 19, 2017
Auszug aus dem Dokument
Preise
Status
| CSD16570Q5B | CSD16570Q5BT | |
|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes | No |
Verpackung
| CSD16570Q5B | CSD16570Q5BT | |
|---|---|---|
| N | 1 | 2 |
| Pin | 8 | 8 |
| Package Type | DNK | DNK |
| Package QTY | 2500 | 250 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | CSD16570 | CSD16570 |
| Width (mm) | 6 | 6 |
| Length (mm) | 5 | 5 |
| Thickness (mm) | .95 | .95 |
| Mechanical Data | Herunterladen | Herunterladen |
Parameter
| Parameters / Models | CSD16570Q5B | CSD16570Q5BT |
|---|---|---|
| Configuration | Single | Single |
| ID, Silicon limited at Tc=25degC, A | 456 | 456 |
| IDM, Max Pulsed Drain Current(Max), A | 400 | 400 |
| Package, mm | SON5x6 | SON5x6 |
| QG Typ, nC | 95 | 95 |
| QGD Typ, nC | 31 | 31 |
| RDS(on) Typ at VGS=4.5V, mOhm | 0.68 | 0.68 |
| Rds(on) Max at VGS=10V, mOhms | 0.59 | 0.59 |
| Rds(on) Max at VGS=4.5V, mOhms | 0.82 | 0.82 |
| VDS, V | 25 | 25 |
| VGS, V | 20 | 20 |
| VGSTH Typ, V | 1.5 | 1.5 |
Öko-Plan
| CSD16570Q5B | CSD16570Q5BT | |
|---|---|---|
| RoHS | Compliant | Compliant |
| Pb Free | Yes | Yes |
Modellreihe
Serie: CSD16570Q5B (2)
Herstellerklassifikation
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor