Datasheet Texas Instruments CSD16415Q5 — Datenblatt
| Hersteller | Texas Instruments |
| Serie | CSD16415Q5 |
N-Kanal-NexFET-Leistungs-MOSFET
Datenblätter
CSD16415Q5 25-V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 943 Kb, Revision: A, Datei veröffentlicht: Sep 28, 2015
Auszug aus dem Dokument
Status
| CSD16415Q5 | CSD16415Q5T | |
|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No | Yes |
Verpackung
| CSD16415Q5 | CSD16415Q5T | |
|---|---|---|
| N | 1 | 2 |
| Pin | 8 | 8 |
| Package Type | DQH | DQH |
| Industry STD Term | VSON-CLIP | VSON-CLIP |
| JEDEC Code | R-PSSO-N | R-PSSO-N |
| Package QTY | 2500 | 250 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | CSD16415 | CSD16415 |
| Width (mm) | 6 | 6 |
| Length (mm) | 5 | 5 |
| Thickness (mm) | 1 | 1 |
| Pitch (mm) | 1.27 | 1.27 |
| Max Height (mm) | 1.05 | 1.05 |
| Mechanical Data | Herunterladen | Herunterladen |
Parameter
| Parameters / Models | CSD16415Q5 | CSD16415Q5T |
|---|---|---|
| Configuration | Single | Single |
| IDM, Max Pulsed Drain Current(Max), A | 200 | 200 |
| Package, mm | SON5x6 | SON5x6 |
| QG Typ, nC | 21 | 21 |
| QGD Typ, nC | 5.2 | 5.2 |
| RDS(on) Typ at VGS=4.5V, mOhm | 1.5 | 1.5 |
| Rds(on) Max at VGS=10V, mOhms | 1.15 | 1.15 |
| Rds(on) Max at VGS=4.5V, mOhms | 1.8 | 1.8 |
| VDS, V | 25 | 25 |
| VGS, V | 16 | 16 |
| VGSTH Typ, V | 1.5 | 1.5 |
Öko-Plan
| CSD16415Q5 | CSD16415Q5T | |
|---|---|---|
| RoHS | Compliant | Compliant |
| Pb Free | Yes | Yes |
Anwendungshinweise
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, Datei veröffentlicht: Nov 16, 2011
Modellreihe
Serie: CSD16415Q5 (2)
Herstellerklassifikation
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor