Datasheet Texas Instruments CSD13302W — Datenblatt
| Hersteller | Texas Instruments |
| Serie | CSD13302W |
CSD13302W 12-V-N-Kanal-NexFET - Leistungs-MOSFET
Datenblätter
CSD13302W 12 V N Channel NexFET Power MOSFET datasheet
PDF, 486 Kb, Datei veröffentlicht: Mar 16, 2015
Auszug aus dem Dokument
Status
| CSD13302W | CSD13302WT | |
|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No | Yes |
Verpackung
| CSD13302W | CSD13302WT | |
|---|---|---|
| N | 1 | 2 |
| Pin | 4 | 4 |
| Package Type | YZB | YZB |
| Industry STD Term | DSBGA | DSBGA |
| JEDEC Code | S-XBGA-N | S-XBGA-N |
| Package QTY | 3000 | 250 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | 302 | 302 |
| Thickness (mm) | .65 | .65 |
| Pitch (mm) | .5 | .5 |
| Max Height (mm) | .625 | .625 |
| Mechanical Data | Herunterladen | Herunterladen |
Parameter
| Parameters / Models | CSD13302W | CSD13302WT |
|---|---|---|
| Configuration | Single | Single |
| IDM, Max Pulsed Drain Current(Max), A | 29 | 29 |
| Package, mm | WLP 1.0x1.0 | WLP 1.0x1.0 |
| QG Typ, nC | 6.0 | 6.0 |
| QGD Typ, nC | 2.1 | 2.1 |
| RDS(on) Typ at VGS=4.5V, mOhm | 14.6 | 14.6 |
| Rds(on) Max at VGS=4.5V, mOhms | 17.1 | 17.1 |
| VDS, V | 12 | 12 |
| VGS, V | 10 | 10 |
| VGSTH Typ, V | 1.0 | 1.0 |
Öko-Plan
| CSD13302W | CSD13302WT | |
|---|---|---|
| RoHS | Compliant | Compliant |
Modellreihe
Serie: CSD13302W (2)
Herstellerklassifikation
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor