Datasheet Texas Instruments CSD19506KTT — Datenblatt

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SLPS586 – MARCH 2016 CSD19506KTT 80 V N-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb-Free Terminal Plating
RoHS Compliant
Halogen Free
D2PAK Plastic Package TA = 25°C TYPICAL VALUE Drain-to-Source Voltage 80 V Qg Gate Charge Total (10 V) 120 nC Qgd Gate Charge Gate to Drain 20 RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage nC VGS = 6 V 2.2 mΩ VGS = 10 V 2.0 mΩ 2.5 V Ordering Information(1) 2 Applications UNIT VDS Secondary Side Synchronous Rectifier
Motor Control DEVICE QTY MEDIA PACKAGE SHIP CSD19506KTT 500 CSD19506KTTT 50 13-Inch
Reel D2PAK Plastic Package Tape &
Reel 3 Description (1) For all available packages, see the orderable addendum at
the end of the data sheet. This 80-V, 2.0-mО©, D2PAK (TO-263) NexFETв„ў
power MOSFET is designed to minimize losses in
power conversion applications. TA = 25В°C VALUE UNIT SPACE VDS Drain-to-Source Voltage 80 V VGS Gate-to-Source Voltage В±20 V Continuous Drain Current (Package limited) 200 Continuous Drain Current (Silicon limited),
TC = 25В°C 291 Continuous Drain Current (Silicon limited),
TC = 100В°C 206 IDM Pulsed Drain Current (1) 400 A PD Power Dissipation 375 W TJ,
Tstg Operating Junction and …