Datasheet Texas Instruments UC2708DW — Datenblatt

HerstellerTexas Instruments
SerieUC2708
ArtikelnummerUC2708DW
Datasheet Texas Instruments UC2708DW

Nicht invertierende Hochgeschwindigkeitstreiber 16-SOIC -40 bis 85

Datenblätter

Dual Non-Inverting Power Driver datasheet
PDF, 1.0 Mb, Revision: C, Datei veröffentlicht: Sep 25, 2007
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Preise

Status

Lifecycle StatusActive (Recommended for new designs)
Manufacture's Sample AvailabilityNo

Verpackung

Pin16
Package TypeDW
Industry STD TermSOIC
JEDEC CodeR-PDSO-G
Package QTY40
CarrierTUBE
Device MarkingUC2708DW
Width (mm)7.5
Length (mm)10.3
Thickness (mm)2.35
Pitch (mm)1.27
Max Height (mm)2.65
Mechanical DataHerunterladen

Öko-Plan

RoHSCompliant

Anwendungshinweise

  • DN-35 IGBT Drive Using MOSFET Gate Drivers
    PDF, 54 Kb, Datei veröffentlicht: Sep 5, 1999
    The UC1708 family of power drivers is made with a high-speed high-voltage Schottky process to interface control functions and high-power switching devices-particularly power MOSFETs. The UC1724 family of Isolated Drive Transmitters along with the UC1725 Isolated Drivers provides a unique solution to driving isolated power MOSFET gates. They are particularly suited to drive the high-side devices
  • U-118 New Driver ICs Optimize High-Speed Power MOSFET Switching Characteristics
    PDF, 573 Kb, Datei veröffentlicht: Sep 5, 1999
    The UC3705 family of power drivers is made with a high speed Schottky process to interface between low-level control functions and high-power switching devices particularly power MOSFETs. These devices are also an optimum choice for capacitive line drivers where up to 1.5 amps may be switched in either direction. With both inverting and non-inverting inputs available logic signals of either pola
  • U-137 Practical Considerations in High Performance MOSFET IGBT and MCT Gate
    PDF, 244 Kb, Datei veröffentlicht: Sep 5, 1999
    The switch-mode power supply industry's trend towards higher conversion frequencies is justified by the dramatic improvement in obtaining higher power densities. And as these frequencies are pushed towards and beyond one MHz the MOSFET transition periods can become a significant portion of the total switching period. Losses associated with the overlap of switch voltage and current not only degrad

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Herstellerklassifikation

  • Semiconductors > Power Management > MOSFET and IGBT Gate Drivers > Low-side Driver