Datasheet Texas Instruments CSD13202Q2 — Datenblatt
| Hersteller | Texas Instruments |
| Serie | CSD13202Q2 |
| Artikelnummer | CSD13202Q2 |
N-Kanal-Leistungs-MOSFET, CSD13202Q2, 12 V Vds, 9,3 Mohm Rdson 4,5 (max) 6-WSON -55 bis 150
Datenblätter
N-Channel NexFET Power MOSFET, CSD13202Q2 datasheet
PDF, 711 Kb, Datei veröffentlicht: Sep 24, 2013
Auszug aus dem Dokument
Status
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
Verpackung
| Pin | 6 |
| Package Type | DQK |
| Package QTY | 3000 |
| Carrier | LARGE T&R |
| Device Marking | 1322 |
| Width (mm) | 2 |
| Length (mm) | 2 |
| Thickness (mm) | .75 |
| Mechanical Data | Herunterladen |
Parameter
| Configuration | Single |
| IDM, Max Pulsed Drain Current(Max) | 76 A |
| Package | SON2x2 mm |
| QG Typ | 5.1 nC |
| QGD Typ | 0.76 nC |
| RDS(on) Typ at VGS=4.5V | 7.5 mOhm |
| Rds(on) Max at VGS=4.5V | 9.3 mOhms |
| VDS | 12 V |
| VGS | 8 V |
| VGSTH Typ | 0.8 V |
Öko-Plan
| RoHS | Compliant |
Anwendungshinweise
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, Datei veröffentlicht: Nov 16, 2011
Herstellerklassifikation
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor