Datasheet Texas Instruments CSD23202W10T — Datenblatt

HerstellerTexas Instruments
SerieCSD23202W10
ArtikelnummerCSD23202W10T
Datasheet Texas Instruments CSD23202W10T

CSD23202W10 12-V-P-Kanal-NexFET ™ -Leistungs-MOSFET 4-DSBGA

Datenblätter

CSD23202W10 12-V P-Channel NexFET Power MOSFET datasheet
PDF, 435 Kb, Datei veröffentlicht: Mar 10, 2014
Auszug aus dem Dokument

Preise

Status

Lifecycle StatusActive (Recommended for new designs)
Manufacture's Sample AvailabilityNo

Verpackung

Pin4
Package TypeYZB
Industry STD TermDSBGA
JEDEC CodeS-XBGA-N
Package QTY250
CarrierSMALL T&R
Device Marking202
Thickness (mm).65
Pitch (mm).5
Max Height (mm).625
Mechanical DataHerunterladen

Parameter

ConfigurationSingle
Id Max Cont-2.2 A
Id Peak(Max)-25 A
PackageWLP 1.0x1.0 mm
QG Typ2.9 nC
QGD Typ0.28 nC
QGS Typ0.55 nC
Rds(on) Max at VGS=1.8V92 mOhms
Rds(on) Max at VGS=2.5V66 mOhms
Rds(on) Max at VGS=4.5V53 mOhms
VDS-12 V
VGS-6 V
VGSTH Typ-0.6 V

Öko-Plan

RoHSCompliant

Modellreihe

Serie: CSD23202W10 (2)

Herstellerklassifikation

  • Semiconductors > Power Management > Power MOSFET > P-Channel MOSFET Transistor