Datasheet Texas Instruments CSD18502Q5BT — Datenblatt
| Hersteller | Texas Instruments |
| Serie | CSD18502Q5B |
| Artikelnummer | CSD18502Q5BT |
40-V-N-Kanal-NexFET ™ -Leistungs-MOSFET 8-VSON-CLIP -55 bis 150
Datenblätter
CSD18502Q5B 40 V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 970 Kb, Revision: B, Datei veröffentlicht: May 18, 2017
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Status
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No |
Verpackung
| Pin | 8 |
| Package Type | DNK |
| Package QTY | 250 |
| Carrier | SMALL T&R |
| Device Marking | CSD18502 |
| Width (mm) | 6 |
| Length (mm) | 5 |
| Thickness (mm) | .95 |
| Mechanical Data | Herunterladen |
Parameter
| Configuration | Single |
| ID, Silicon limited at Tc=25degC | 204 A |
| IDM, Max Pulsed Drain Current(Max) | 400 A |
| Package | SON5x6 mm |
| QG Typ | 52 nC |
| QGD Typ | 8.4 nC |
| Rds(on) Max at VGS=10V | 2.3 mOhms |
| Rds(on) Max at VGS=4.5V | 3.3 mOhms |
| VDS | 40 V |
| VGS | 20 V |
| VGSTH Typ | 1.8 V |
Öko-Plan
| RoHS | Compliant |
| Pb Free | Yes |
Anwendungshinweise
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, Datei veröffentlicht: Nov 16, 2011
Modellreihe
Serie: CSD18502Q5B (2)
- CSD18502Q5B CSD18502Q5BT
Herstellerklassifikation
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor