Datasheet Texas Instruments CSD17313Q2T — Datenblatt
| Hersteller | Texas Instruments |
| Serie | CSD17313Q2 |
| Artikelnummer | CSD17313Q2T |
30 V N-Kanal NexFET ™ Leistungs-MOSFET 6-WSON -55 bis 150
Datenblätter
CSD17313Q2 30-V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 406 Kb, Revision: E, Datei veröffentlicht: Sep 30, 2015
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Preise
Status
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No |
Verpackung
| Pin | 6 |
| Package Type | DQK |
| Package QTY | 250 |
| Carrier | SMALL T&R |
| Device Marking | 1733 |
| Width (mm) | 2 |
| Length (mm) | 2 |
| Thickness (mm) | .75 |
| Mechanical Data | Herunterladen |
Parameter
| Configuration | Single |
| IDM, Max Pulsed Drain Current(Max) | 20 A |
| Package | SON2x2 mm |
| QG Typ | 2.1 nC |
| QGD Typ | 0.4 nC |
| RDS(on) Typ at VGS=4.5V | 26 mOhm |
| Rds(on) Max at VGS=4.5V | 32 mOhms |
| VDS | 30 V |
| VGS | 10 V |
| VGSTH Typ | 1.3 V |
Öko-Plan
| RoHS | Compliant |
Design Kits und Evaluierungsmodule
- Evaluation Modules & Boards: TMDSCSK8127
TMS320DM8127 Camera Starter Kit (CSK)
Lifecycle Status: Active (Recommended for new designs) - Evaluation Modules & Boards: TMDSCSK388
DM38x Camera Starter Kit (CSK)
Lifecycle Status: Active (Recommended for new designs)
Anwendungshinweise
- Power Solution for the IntelВ® Atomв„ў E6X5CPDF, 27 Kb, Datei veröffentlicht: Jun 29, 2011
Power Solution for the IntelВ® Atomв„ў E6x5x - Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, Datei veröffentlicht: Nov 16, 2011
Modellreihe
Serie: CSD17313Q2 (2)
- CSD17313Q2 CSD17313Q2T
Herstellerklassifikation
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor