Datasheet Texas Instruments UC3709DW — Datenblatt

HerstellerTexas Instruments
SerieUC3709
ArtikelnummerUC3709DW
Datasheet Texas Instruments UC3709DW

Invertieren von Hochgeschwindigkeits-MOSFET-Treibern 16-SOIC 0 bis 70

Datenblätter

UC3709 Dual High-Speed FET Driver datasheet
PDF, 548 Kb, Revision: C, Datei veröffentlicht: Feb 27, 2008
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Preise

Status

Lifecycle StatusActive (Recommended for new designs)
Manufacture's Sample AvailabilityYes

Verpackung

Pin16
Package TypeDW
Industry STD TermSOIC
JEDEC CodeR-PDSO-G
Package QTY40
CarrierTUBE
Device MarkingUC3709DW
Width (mm)7.5
Length (mm)10.3
Thickness (mm)2.35
Pitch (mm)1.27
Max Height (mm)2.65
Mechanical DataHerunterladen

Öko-Plan

RoHSCompliant

Anwendungshinweise

  • U-118 New Driver ICs Optimize High-Speed Power MOSFET Switching Characteristics
    PDF, 573 Kb, Datei veröffentlicht: Sep 5, 1999
    The UC3705 family of power drivers is made with a high speed Schottky process to interface between low-level control functions and high-power switching devices particularly power MOSFETs. These devices are also an optimum choice for capacitive line drivers where up to 1.5 amps may be switched in either direction. With both inverting and non-inverting inputs available logic signals of either pola
  • U-137 Practical Considerations in High Performance MOSFET IGBT and MCT Gate
    PDF, 244 Kb, Datei veröffentlicht: Sep 5, 1999
    The switch-mode power supply industry's trend towards higher conversion frequencies is justified by the dramatic improvement in obtaining higher power densities. And as these frequencies are pushed towards and beyond one MHz the MOSFET transition periods can become a significant portion of the total switching period. Losses associated with the overlap of switch voltage and current not only degrad

Modellreihe

Serie: UC3709 (4)

Herstellerklassifikation

  • Semiconductors > Power Management > MOSFET and IGBT Gate Drivers > Low-side Driver