Datasheet Texas Instruments CSD19531Q5AT — Datenblatt
| Hersteller | Texas Instruments |
| Serie | CSD19531Q5A |
| Artikelnummer | CSD19531Q5AT |
100 V, 5,3 mOhm, SON5x6 NexFET ™ Leistungs-MOSFET 8-VSONP -55 bis 150
Datenblätter
CSD19531Q5A 100 V N-Channel NexFET Power MOSFETs datasheet
PDF, 737 Kb, Revision: B, Datei veröffentlicht: May 19, 2014
Auszug aus dem Dokument
Status
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No |
Verpackung
| Pin | 8 |
| Package Type | DQJ |
| Package QTY | 250 |
| Carrier | SMALL T&R |
| Device Marking | CSD19531 |
| Width (mm) | 6 |
| Length (mm) | 4.9 |
| Thickness (mm) | 1 |
| Mechanical Data | Herunterladen |
Parameter
| Configuration | Single |
| ID, Silicon limited at Tc=25degC | 110 A |
| IDM, Max Pulsed Drain Current(Max) | 337 A |
| Package | SON5x6 mm |
| QG Typ | 37 nC |
| QGD Typ | 6.6 nC |
| Rds(on) Max at VGS=10V | 6.4 mOhms |
| VDS | 100 V |
| VGS | 20 V |
| VGSTH Typ | 2.7 V |
Öko-Plan
| RoHS | Compliant |
| Pb Free | Yes |
Design Kits und Evaluierungsmodule
- Evaluation Modules & Boards: UCC24636EVM
UCC24636 Synchronous Rectifier Daughter Board/Evaluation Module
Lifecycle Status: Active (Recommended for new designs)
Anwendungshinweise
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, Datei veröffentlicht: Nov 16, 2011
Modellreihe
Serie: CSD19531Q5A (2)
- CSD19531Q5A CSD19531Q5AT
Herstellerklassifikation
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor