Datasheet Texas Instruments CSD19538Q3AT — Datenblatt
| Hersteller | Texas Instruments |
| Serie | CSD19538Q3A |
| Artikelnummer | CSD19538Q3AT |
100 V N-Kanal-NexFET-Leistungs-MOSFET 8-VSONP -55 bis 150
Datenblätter
CSD19538Q3A 100-V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 352 Kb, Revision: A, Datei veröffentlicht: Mar 20, 2017
Auszug aus dem Dokument
Status
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No |
Verpackung
| Pin | 8 |
| Package Type | DNH |
| Package QTY | 250 |
| Carrier | SMALL T&R |
| Device Marking | 19538 |
| Width (mm) | 3.3 |
| Length (mm) | 3.3 |
| Thickness (mm) | .8 |
| Mechanical Data | Herunterladen |
Parameter
| Configuration | Single |
| ID, Silicon limited at Tc=25degC | 13.7 A |
| IDM, Max Pulsed Drain Current(Max) | 36 A |
| Package | SON3x3 mm |
| QG Typ | 4.3 nC |
| QGD Typ | 0.8 nC |
| Rds(on) Max at VGS=10V | 61 mOhms |
| VDS | 100 V |
| VGS | 20 V |
| VGSTH Typ | 3.2 V |
Öko-Plan
| RoHS | Compliant |
Anwendungshinweise
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, Datei veröffentlicht: Nov 16, 2011
Modellreihe
Serie: CSD19538Q3A (2)
- CSD19538Q3A CSD19538Q3AT
Herstellerklassifikation
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor