Datasheet BUK769R6-80E - NXP MOSFET, N-CH, 80 V, 75 A, D2PAK — Datenblatt

NXP BUK769R6-80E

Part Number: BUK769R6-80E

Detaillierte Beschreibung

Manufacturer: NXP

Description: MOSFET, N-CH, 80 V, 75 A, D2PAK

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Docket:
BUK769R6-80E
5 October 2012
N-channel TrenchMOS standard level FET
Product data sheet
1.

Product profile

Specifications:

  • Continuous Drain Current Id: 75 A
  • Drain Source Voltage Vds: 80 V
  • Number of Pins: 3
  • On Resistance Rds(on): 7200µ Ohm
  • Operating Temperature Range: -55°C to +175°C
  • Power Dissipation: 182 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 3 V
  • Transistor Case Style: TO-263
  • Transistor Polarity: N Channel
  • RoHS: Y-Ex
  • SVHC: No SVHC (18-Jun-2012)

Andere Namen:

BUK769R680E, BUK769R6 80E