Datasheet BSS192P L6327 - Infineon MOSFET, P-CH, 250 V, 190 mA, SOT-89 — Datenblatt

Infineon BSS192P L6327

Part Number: BSS192P L6327

Detaillierte Beschreibung

Manufacturer: Infineon

Description: MOSFET, P-CH, 250 V, 190 mA, SOT-89

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Docket:
BSS192P SIPMOS Small-Signal-Transistor
Feature · P-Channel · Enhancement mode · Logic Level · dv/dt rated
Product Summary VDS RDS(on) ID -250 12 -0.19
PG-SOT89
Drain pin 2 Gate pin1 Source pin 3

Specifications:

  • Continuous Drain Current Id: -190 mA
  • Drain Source Voltage Vds: -250 V
  • MSL: MSL 1 - Unlimited
  • Number of Pins: 3
  • On Resistance Rds(on): 7.7 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation: 1 W
  • Rds(on) Test Voltage Vgs: -10 V
  • Threshold Voltage Vgs Typ: -1.5 V
  • Transistor Case Style: SOT-89
  • Transistor Polarity: P Channel
  • RoHS: Yes