Datasheet BSP125 L6327 - Infineon MOSFET, N-CH, 600 V, 120 mA, SOT-223 — Datenblatt

Infineon BSP125 L6327

Part Number: BSP125 L6327

Detaillierte Beschreibung

Manufacturer: Infineon

Description: MOSFET, N-CH, 600 V, 120 mA, SOT-223

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Docket:
Rev.

2.1
BSP125
SIPMOS Power-Transistor
Feature · N-Channel · Enhancement mode · Logic Level · dv/dt rated
Product Summary VDS RDS(on) ID 600 45 0.12

Specifications:

  • Continuous Drain Current Id: 120 mA
  • Drain Source Voltage Vds: 600 V
  • MSL: MSL 1 - Unlimited
  • Number of Pins: 4
  • On Resistance Rds(on): 25 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation: 1.8 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 1.9 V
  • Transistor Case Style: SOT-223
  • Transistor Polarity: N Channel
  • RoHS: Yes