Datasheet BUK763R8-80E - NXP MOSFET, N CH, 80 V, 120 A, D2PAK — Datenblatt

NXP BUK763R8-80E

Part Number: BUK763R8-80E

Detaillierte Beschreibung

Manufacturer: NXP

Description: MOSFET, N CH, 80 V, 120 A, D2PAK

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Docket:
D2
PA K
BUK763R8-80E
N-channel TrenchMOS standard level FET
Rev.

2 -- 16 May 2012 Product data sheet

Specifications:

  • Continuous Drain Current Id: 120 A
  • Drain Source Voltage Vds: 80 V
  • MSL: MSL 1 - Unlimited
  • Number of Pins: 3
  • On Resistance Rds(on): 0.0031 Ohm
  • Operating Temperature Range: -55°C to +175°C
  • Power Dissipation: 357 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 3 V
  • Transistor Case Style: TO-263
  • Transistor Polarity: N Channel
  • RoHS: Y-Ex
  • SVHC: No SVHC (19-Dec-2011)

Andere Namen:

BUK763R880E, BUK763R8 80E