Datasheet FDD86102LZ - Fairchild MOSFET, N CH, 100 V, 35 A, TO-252 — Datenblatt
Part Number: FDD86102LZ
Detaillierte Beschreibung
Manufacturer: Fairchild
Description: MOSFET, N CH, 100 V, 35 A, TO-252
Docket:
FDD86102LZ N-Channel PowerTrench® MOSFET
FDD86102LZ
N-Channel PowerTrench® MOSFET
100 V, 35 A, 22.5 m Features
Max rDS(on) = 22.5 m at VGS = 10 V, ID = 8 A Max rDS(on) = 31 m at VGS = 4.5 V, ID = 7 A HBM ESD protection level > 6 kV typical (Note 4) Very low Qg and Qgd compared to competing trench technologies Fast switching speed 100% UIL tested RoHS Compliant
Specifications:
- Continuous Drain Current Id: 42 A
- Drain Source Voltage Vds: 100 V
- MSL: MSL 1 - Unlimited
- Number of Pins: 3
- On Resistance Rds(on): 0.0178 Ohm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation: 54 W
- Rds(on) Test Voltage Vgs: 10 V
- SVHC: No SVHC (19-Dec-2011)
- Threshold Voltage Vgs Typ: 1.5 V
- Transistor Case Style: TO-252
- Transistor Polarity: N Channel
RoHS: Yes