Datasheet SQ2301ES-T1-GE3 - Vishay MOSFET, P CH, W/D, 20 V, 3.9 A, SOT23 — Datenblatt

Vishay SQ2301ES-T1-GE3

Part Number: SQ2301ES-T1-GE3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, P CH, W/D, 20 V, 3.9 A, SOT23

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Docket:
New Product
SQ2301ES
Vishay Siliconix
Automotive P-Channel 20 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY

Specifications:

  • Continuous Drain Current Id: -3.9 A
  • Drain Source Voltage Vds: -20 V
  • Number of Pins: 3
  • On Resistance Rds(on): 0.08 Ohm
  • Operating Temperature Range: -55°C to +175°C
  • Power Dissipation: 3 W
  • Rds(on) Test Voltage Vgs: -4.5 V
  • Transistor Case Style: TO-236
  • Transistor Polarity: P Channel

RoHS: Yes

Andere Namen:

SQ2301EST1GE3, SQ2301ES T1 GE3