Datasheet SIS330DN-T1-GE3 - Vishay MOSFET, N CH, 30 V, 35 A, PPK 1212 — Datenblatt

Part Number: SIS330DN-T1-GE3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N CH, 30 V, 35 A, PPK 1212

data sheetDownload Data Sheet

Docket:
New Product
SiS330DN
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

  • Continuous Drain Current Id: 35 A
  • Drain Source Voltage Vds: 30 V
  • Number of Pins: 8
  • On Resistance Rds(on): 0.0045 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation: 52 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel

RoHS: Yes

Andere Namen:

SIS330DNT1GE3, SIS330DN T1 GE3